eLABa objektas:   "Oksido storio įtaka krūvininkų pernešimui per M-D-P sandūrą", 2010,D:20100707:115609-01982
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Prieigos teisės Laikotarpiu nuo 2010-07-07 iki 2015-01-00 neprieinamas. Pasibaigus laikotarpiui bus prieinama laisvai.
Institucija Vilniaus pedagoginis universitetas
Mokslo kryptis 02 P - Fizika
Atsakomybė Kazakevičius, Audrius - Magistro baigiamojo darbo autorius
Bondarenko, Vladimiras - Magistro baigiamojo darbo vertinimo komisijos pirmininkas
Alkauskas, Andrius - Magistro baigiamojo darbo vertinimo posėdžio sekretorius
Vaišnoras, Rimantas - Magistro baigiamojo darbo vertinimo komisijos narys
Audzijonis, Algirdas - Magistro baigiamojo darbo vertinimo komisijos narys
Gaigalas, Gediminas - Magistro baigiamojo darbo vertinimo komisijos narys
Rimeika, Alfonsas - Magistro baigiamojo darbo vertinimo komisijos narys
Svirskas, Kęstutis - Magistro baigiamojo darbo vertinimo komisijos narys
Lazauskaitė, Roma - Magistro baigiamojo darbo vertinimo komisijos narys
Udris, Arvydas - Magistro baigiamojo darbo vertinimo komisijos narys
Siroicas, Janas - Magistro baigiamojo darbo vertinimo komisijos narys
Lapeika, Vytautas - Magistro baigiamojo darbo vadovas
Čerškus, Aurimas - Magistro baigiamojo darbo recenzentas
Vilniaus pedagoginis universitetas - Mokslinį laipsnį teikianti institucija
Antraštė (-ės) Oksido storio įtaka krūvininkų pernešimui per M-D-P sandūrą
Oxide thickness effect of the charge carriers transport in M-D-P structures
Santrauka [EN]

The aim of the research is to establish the mechanism of charge transport in Al-SiO2-n/Si structure.

In Chapter One we analyze the existing papers on the research of the main theoretical models of charge transfer with the barrier are being presented.

In Chapter Two we describe the technology of preparing samples, the research methods and the equipment which has been used for experiment.

In Chapter Three we analyze the experimental data. In Chapter Three the experimental data on the dependence of the reverse current on volt¬age and temperature in the analyzed structures are presented and the obtained dependences are compared with a theoretical model of an electron-tunneling from a deep centers assisted by phonons. At the beginning of the chapter the experimental data on the dependence of current strength on the reverse volt¬age and temperature in Al-SiO2-n/Si structures are discussed. These structures are characterized by the reverse current having a strong dependence on temperature at low reverse voltage values. The experimental data are com¬pared with the theoretical W(F,T) probabilities. We assume that the current flowing through the barrier is proportional to the tunneling probability and that none of the electrons that tunnel from their energy level into conduction band are scattered, or recombined, before they leave the barrier region of the semiconductor. The experimental data are in good agreement with the theo¬retical probability.

Raktažodžiai: Oxide, charge carriers,M-D-P